 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DMN3010LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features * Low On-Resistance * 9m @ VGS = 10V * 13m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data * * * * * * * * SOP-8L NEW PRODUCT * * * * * * * Case: SOP-8L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072g (approximate) S S S G TOP VIEW TOP VIEW Internal Schematic D D D D Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3) @TA = 25C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25C TA = 70C ID IDM Value 30 20 16 13 64 Units V V A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Symbol PD RJA TJ, TSTG Value 2.5 50 -55 to +150 Unit W C/W C Device mounted on 2 oz. Copper pads on FR-4 PCB, with RJA = 50C No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMN3010LSS Document number: DS31259 Rev. 6 - 2 1 of 5 www.diodes.com November 2008 (c) Diodes Incorporated DMN3010LSS Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: @TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD Ciss Coss Crss RG Qg Qgs Qgd td(on) tr td(off) tf Min 30 1.1 0.5 Typ 16 2096 329 258 1.2 22.4 43.7 Max 1 100 2.0 9 13 1.2 Unit V A nA V m S V pF pF pF Test Condition VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 16A VGS = 4.5V, ID = 10A VDS = 10V, ID = 12A VGS = 0V, IS = 16A VDS = 15V, VGS = 0V f = 1.0MHz VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 16A VDS = 15V, VGS = 10.0V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A VDS = 15V, VGS = 10V, ID = 16A VGS = 10V, VDS = 15V, RD = 15, RG = 6 NEW PRODUCT 5.5 12.6 7.11 10.3 58.3 32.1 nC ns 5. Short duration pulse test used to minimize self-heating effect. 20 18 16 VGS = 10V VGS = 4.5V 20 18 16 IS, SOURCE CURRENT (A) VGS = 3.0V ID, DRAIN CURRENT (A) 14 12 10 8 6 4 2 0 0 0.5 VGS = 1.5V 14 12 10 8 6 4 T A = 150C TA = 125C TA = 85C TA = 25C TA = -55C VGS = 2.5V 2 5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 2 Source Current vs. Source-Drain Voltage DMN3010LSS Document number: DS31259 Rev. 6 - 2 2 of 5 www.diodes.com November 2008 (c) Diodes Incorporated DMN3010LSS 20 1.6 1.5 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (m) 18 16 14 12 10 8 6 TA = 25C 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VGS = 10V ID = 16A TA = 150C TA = 125C TA = 85C NEW PRODUCT VGS = 4.5V ID = 10A TA = -55C 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 3 Drain-Source On-Resistance vs. Drain Current 0 2 4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 On-Resistance Variation with Temperature 10,000 VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.5 2.2 C, CAPACITANCE (pF) Ciss 1,000 C oss Crss 1.9 ID = 250A 1.6 100 1.3 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Typical Capacitance 30 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature 1 -50 100 10 IS, SOURCE CURRENT (A) 1 0.1 TA = 150C TA = 125C TA = 85C 0.01 TA = 25C TA = -55C 0.001 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Diode Forward Voltage vs. Current 1 DMN3010LSS Document number: DS31259 Rev. 6 - 2 3 of 5 www.diodes.com November 2008 (c) Diodes Incorporated DMN3010LSS 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 88C/W P(pk) D = 0.01 D = 0.005 D = Single Pulse NEW PRODUCT D = 0.02 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 8 Transient Thermal Response Ordering Information Part Number DMN3010LSS-13 Notes: (Note 6) Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Top View 8 5 Logo N3010LS YY WW Part no. 1 4 Xth week: 01~52 Year : "07" =2007 "08" =2008 Package Outline Dimensions SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.30 1.50 A3 0.20 Typ. b 0.3 0.5 D 4.80 5.30 E 5.79 6.20 E1 3.70 4.10 e 1.27 Typ. h 0.35 L 0.38 1.27 0 8 All Dimensions in mm E1 E A1 L 0.254 GAUGE PLANE SEATING PLANE DETAIL A h 45 A2 A A3 e D b 7~9 DETAIL A DMN3010LSS Document number: DS31259 Rev. 6 - 2 4 of 5 www.diodes.com November 2008 (c) Diodes Incorporated DMN3010LSS Suggested Pad Layout X NEW PRODUCT Z Dimensions Z C X Y Value (in mm) 5.1 1.27 0.41 1.0 C Y IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN3010LSS Document number: DS31259 Rev. 6 - 2 5 of 5 www.diodes.com November 2008 (c) Diodes Incorporated |
Price & Availability of DMN3010LSS-13
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |